High voltage silicon carbide devices having bi-directional blocking capabilities

US7615801B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Sei-Hyung Ryu · Cary, US
• Jason Jenny · Raleigh, US
• Mrinal K. Das · Morrisville, US
• Anant Agarwal · San Jose, US
• John Williams Palmour · Raleigh, US
• Hudson M. Hobgood · Pittsboro, US

Key dates

• Filing date: Jun 23, 2005
• Grant date: Nov 10, 2009
• Expiry date: Sep 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/10156

Abstract

High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.