Patent · US Active

Optical metrology optimization for repetitive structures

US7616325B2 · kind B2 · utility

2Cited by

25References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Vi Vuong · Fremont, US
Junwei Bao · Los Altos, US
Joerg Bischoff · Ilmenau, DE

Key dates

Filing date	Jun 17, 2008
Grant date	Nov 10, 2009
Priority date	—
Expiry date	Jun 17, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70625
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An optical metrology model for a structure to be formed on a wafer is developed by characterizing a top-view profile and a cross-sectional view profile of the structure using profile parameters. The profile parameters of the top-view profile and the cross-sectional view profile are integrated together into the optical metrology model. The profile parameters of the optical metrology model are saved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.