Patent · US Active

Retention margin program verification

US7616499B2 · kind B2 · utility

25Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 28, 2006
Grant dateNov 10, 2009
Priority date
Expiry dateDec 28, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5621
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Data verification in a memory device using a portion of a data retention margin is provided. A bit count is read from the region to determine whether errors will result in the memory. A read in one or more retention margin portions is performed after the normal program verify sequence and if the number of bits in these regions is more than a pre-set the memory will fail verify status. A method of verifying data in a memory device includes the steps of: defining an retention margin between adjacent data thresholds; programming the memory device with data; determining whether bits are present in the data retention margin; and if the number of bits in the retention margin exceeds a threshold, generating an error.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.