Methods of forming capacitors

US7618874B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Kevin R. Shea · Boise, US
• Brett W. Busch · Boise, US
• Farrell M. Good · Meridian, US
• Irina Vasilyeva · Boise, US
• Vishwanath Bhat · Boise, US

Key dates

• Filing date: May 2, 2008
• Grant date: Nov 17, 2009
• Expiry date: May 2, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T156/10

Abstract

A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.