Methods of forming a layer for barrier applications in an interconnect structure

US7618893B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Xinyu Fu · Pleasanton, US
• Keyvan Kashefizadeh · Dublin, US
• Ashish Bodke · San Jose, US
• Winsor Lam · Daly City, US
• Yiochiro Tanaka · Santa Clara, US
• Wonwoo Kim · San Jose, US

Key dates

• Filing date: Mar 4, 2008
• Grant date: Nov 17, 2009
• Expiry date: Mar 4, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical valor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.