Ashish Bodke
16Patents
5h-index
36Co-inventors
62Inventor score
Filing activity: Sep 1, 1999 → Dec 28, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8945414B1 | Oxide removal by remote plasma treatment with fluorine and oxygen radicals | Electricity | 90 | Active |
| US6365543B1 | Process for the production of an oxidation catalyst on-line | Emerging Cross-Sectional Technologies | 27 | Expired |
| US9105497B2 | Methods of forming gate structures for transistor devices for CMOS applications | Electricity | 15 | Active |
| US9399812B2 | Methods of preventing plasma induced damage during substrate processing | Electricity | 8 | Active |
| US9362283B2 | Gate structures for transistor devices for CMOS applications and products | Electricity | 6 | Active |
| US7618893B2 | Methods of forming a layer for barrier applications in an interconnect structure | Electricity | 5 | Active |
| US9196475B2 | Methods for fabricating integrated circuits including fluorine incorporation | Electricity | 4 | Active |
| US9246092B1 | Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application | Electricity | 4 | Active |
| US9297775B2 | Combinatorial screening of metallic diffusion barriers | Physics | 1 | Active |
| US9368721B1 | Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory application | Electricity | 1 | Active |
| US9337238B1 | Photo-induced MSM stack | Electricity | 0 | Active |
| US9059156B2 | Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approach | Electricity | 0 | Active |
| US9236261B2 | Deposition of titanium-aluminum layers | Electricity | 0 | Active |
| US9455393B1 | Low temperature deposition of low loss dielectric layers in superconducting circuits | Electricity | 0 | Active |
| US8168543B2 | Methods of forming a layer for barrier applications in an interconnect structure | Electricity | 0 | Active |
| US7846824B2 | Methods for forming a titanium nitride layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.