Patent · US Active

Memory cell with trigger element

US7619917B2 · kind B2 · utility

28Cited by

14References

31Claims

0Family size

Assignee

Qimonda North America Corp. · US

Inventors

Thomas Nirschl · Putzbrunn, DE
Thomas Happ · Tarrytown, US
Jan Boris Philipp · Peekskill, US

Key dates

Filing date	Nov 28, 2006
Grant date	Nov 17, 2009
Priority date	—
Expiry date	Nov 28, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/76
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device includes a plurality of word lines extending as rows and bit lines extending as columns. A memory cell is coupled between a word line and a bit line, wherein the memory cell includes a unipolar memory element selectively coupled to the bit line via a trigger element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.