Reducing polishing pad deformation
US7621798B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Mar 7, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/205
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing pad is described. A chemical mechanical polishing pad has an outer layer that includes a polishing surface, a first thinned region defined by a recess on a bottom surface of the pad, a first thick region surrounding the first thinned region, a second thinned region surrounding the first thick region, and a second thick region surrounding the second thinned region. The first thick region is not vertically extendable. The second thinned region defines one or more flexure mechanisms configured to make the first thinned region and the first thick region movable relative to the second thick region in a direction parallel or substantially parallel to the polishing surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.