Resist composition and patterning process
US7622242B2 · kind B2 · utility
21Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2008 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Sep 23, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2≦a≦0.8, and 0.1≦b≦0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.