Patent · US Active

Forming of a single-crystal semiconductor layer portion separated from a substrate

US7622368B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Didier Dutartre · Meylan, FR
Nicolas Loubet · Guilderland, US
Alexandre Talbot · Grenoble, FR

Key dates

Filing date	Feb 9, 2007
Grant date	Nov 24, 2009
Priority date	—
Expiry date	Nov 9, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02639
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.