Ion implantation device with a dual pumping mode and method thereof
US7622722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Jul 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/182
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.