Magnetoresistive random access memory with high current density
US7626221B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 23, 2005 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Feb 23, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.