High stress diamond like carbon film
US7629271B1 · kind B1 · utility
2Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2008 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Sep 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2 and the additive gas includes Ar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.