Strain-inducing semiconductor regions
US7629603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Nov 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
Abstract
A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. In one embodiment, formation of a strain-inducing semiconductor region, comprising three or more species of charge-neutral lattice-forming atoms, laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate. Thus, a strained crystalline substrate may be provided. In another embodiment, a semiconductor region with a crystalline lattice of three or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.