Electron beam apparatus and method of generating an electron beam irradiation pattern
US7635851B2 · kind B2 · utility
2Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Mar 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.