Method and structure for forming slot via bitline for MRAM devices
US7635884B2 · kind B2 · utility
8Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2005 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Dec 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.