Semiconductor diode and IGBT

US7635909B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Pfirsch · Birkenfeld, DE
• Elmar Falck · Hohenbrunn, DE
• Josef Lutz · Rohrau, AT

Key dates

• Filing date: Dec 23, 2004
• Grant date: Dec 22, 2009
• Expiry date: Dec 23, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/107

Abstract

A semiconductor diode has an anode, a cathode and a semiconductor volume provided between anode and cathode. A plurality of semiconductor zones are formed in the semiconductor volume, which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode. The semiconductor zones are spaced apart from the cathode.