Method of fabricating a high Q factor integrated circuit inductor

US7638406B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel C. Edelstein · White Plains, US
• Panayotis Andricacos · Ossining, US
• John M. Cotte · New Fairfield, US
• Hariklia Deligianni · Alpine, US
• John Harold Magerlein · Yorktown Heights, US
• Kevin S. Petrarca · Newburgh, US
• Kenneth J. Stein · Sandy Hook, US
• Richard P. Volant · New Fairfield, US

Key dates

• Filing date: Dec 28, 2005
• Grant date: Dec 29, 2009
• Expiry date: Jan 5, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/30107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming an inductor. The method includes: forming a dielectric layer on a substrate; forming a lower trench in the dielectric layer; forming a liner in the lower trench and on the dielectric layer; forming a Cu seed layer over the liner; forming a resist layer on the Cu seed layer; forming an upper trench in the resist layer; electroplating Cu to completely fill the lower trench and at least partially fill the upper trench; removing the resist layer; selectively forming a passivation layer on all exposed Cu surfaces; selectively removing the Cu seed layer from regions of the liner; and removing the thus exposed regions of the liner from the dielectric layer, wherein a top surface of the inductor extends above a top surface of the dielectric layer, the passivation layer remaining on regions of sidewalls of the inductor above the top surface of the dielectric layer.