Phase change memory device and method of forming the same
US7638788B2 · kind B2 · utility
1Cited by
5References
27Claims
0Family size
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Key dates
| Filing date | Oct 16, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Feb 1, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.