Multi-step anneal of thin films for film densification and improved gap-fill
US7642171B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2004 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Nov 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.