Methods of forming moisture barrier for low k film integration with anti-reflective layers
US7642202B1 · kind B1 · utility
6Cited by
21References
21Claims
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Key dates
| Filing date | Jun 27, 2005 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jun 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.