MRAM cell using multiple axes magnetization and method of operation
US7643332B2 · kind B2 · utility
28Cited by
5References
42Claims
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Key dates
| Filing date | Jun 23, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory cell includes a free layer structure and a reference layer structure including an anti-ferromagnetic layer structure pinning the magnetization orientation of the reference layer structure, the reference layer structure having a higher magnetic coercivity and being magnetically polarizable bidirectional and parallel to more than one axes by a magnetic field applied during a writing procedure so as to store information in the reference layer structure while heating the anti-ferromagnetic layer structure above its blocking temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.