Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion
US7648621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | May 23, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D21/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 μm or less or 60 μm or more or a non-recrystallized anode. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.