Semiconductor structure including mixed rare earth oxide formed on silicon
US7648864B2 · kind B2 · utility
3Cited by
33References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2008 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Aug 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.