Patent · US Active

Method for preventing the formation of dentrites in a semiconductor

US7655563B2 · kind B2 · utility

1Cited by

4References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gabriela Brase · Fishkill, US
Martin Ostermayr · Straubing, DE
Erwin Ruderer · Borgo San Lazzaro, DE

Key dates

Filing date	Dec 21, 2007
Grant date	Feb 2, 2010
Priority date	—
Expiry date	Jan 15, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a semiconductor circuit arrangement having a semiconductor substrate, a first doping region, a second doping region, a connection doping region, an insulation layer and an electrically conductive structure which is to be planarized, it being possible for the charge carriers formed during a planarization step to be reliably dissipated, and for dendrite formation to be prevented, by a discharge doping region formed in the first and second doping regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.