Power trench transistor

US7655975B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Wolfgang Werner · Hersbruck, DE
• Markus Zundel · Egmating, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Oct 31, 2005
• Grant date: Feb 2, 2010
• Expiry date: Nov 27, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.