Trench IGBT for highly capacitive loads
US7655977B2 · kind B2 · utility
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4References
14Claims
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Key dates
| Filing date | Oct 18, 2005 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Nov 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
An IGBT for controlling the application of power to a plasma display panel has an increased current conduction capability and a reduced conduction loss at the expense of a reduced safe operating area. For a device with a 300 volt breakdown voltage rating, the die has a substrate resistivity less than 10 m ohm cm; a buffer layer thickness of about 8 μm resistivity in the range of 0.05 to 0.10 ohm cm, and an epi layer for receiving junction patterns and trenches, which has a thickness of from 31 to 37 μm and resistivity in te range of 14 to 18 ohm cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.