Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer

US7659156B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Voon-Yew Thean · Fishkill, US
• Marc Rossow · Austin, US
• Gregory S. Spencer · Pflugerville, US
• Tab A. Stephens · Kyle, US
• Dina H. Triyoso · Mechanicville, US
• Victor H. Vartanian · Dripping Springs, US

Key dates

• Filing date: Apr 18, 2007
• Grant date: Feb 9, 2010
• Expiry date: Jan 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0144

Abstract

A semiconductor device is provided which comprises a semiconductor layer (109), a dielectric layer (111), first and second gate electrodes (129, 131) having first and second respective work functions associated therewith, and a layer of hafnium oxide (113) disposed between said dielectric layer and said first and second gate electrodes.