Plasma-enhanced pulsed deposition of metal carbide films
US7666474B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2008 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | May 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.