Air gap integration scheme
US7670924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2008 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Apr 13, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.