Copper metallization of through silicon via
US7670950B2 · kind B2 · utility
33Cited by
29References
21Claims
0Family size
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Key dates
| Filing date | Aug 4, 2008 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Aug 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.