Methods for forming resistive switching memory elements
US7678607B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Mar 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.