Patent · US Active

MuGFET with increased thermal mass

US7678632B2 · kind B2 · utility

6Cited by

1References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Harald Gossner · Riemerling, DE
Christian Russ · Diedorf, DE
Jens Schneider · Bielefeld, DE
Thomas Schulz · Austin, US

Key dates

Filing date	Nov 17, 2006
Grant date	Mar 16, 2010
Priority date	—
Expiry date	Jun 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region. Other embodiments are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.