Patent · US Active

Semiconductor device comprising a contact structure with increased etch selectivity

US7678690B2 · kind B2 · utility

9Cited by

12References

12Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Ralf Richter · Dresden, DE
Carsten Peters · Dresden, DE
Heike Salz · Radebeul, DE
Matthias Schaller · Dresden, DE

Key dates

Filing date	Sep 22, 2006
Grant date	Mar 16, 2010
Priority date	—
Expiry date	Feb 27, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By providing additional etch stop layers and/or etch protection layers, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. Consequently, conductive line erosion and/or penetration into extension regions may be significantly reduced, thereby improving the reliability and performance of corresponding semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.