High-temperature stable gate structure with metallic electrode
US7683418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2008 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Nov 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non-oxidizing atmosphere, wherein the layer of metal atoms has a thickness of less than about 15 Å; forming an oxygen diffusion barrier atop the layer of metal atoms, wherein the non-oxidizing atmosphere is maintained; forming a gate conductor atop the oxygen diffusion barrier; and annealing the layer of metal atoms and the dielectric layer, wherein the layer of metal atoms reacts with the dielectric layer to provide a continuous metal oxide layer having a dielectric constant ranging from about 25 to about 30 and a thickness less than about 15 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.