Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same
US7683439B2 · kind B2 · utility
0Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Mar 12, 2007 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Feb 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is formed over a semiconductor substrate and has a gate dielectric over the semiconductor substrate and a gate over the gate dielectric. The gate, at an interface with the gate dielectric, comprises a transition metal, carbon, and an electropositive element. The transition metal comprises one of group consisting of tantalum, titanium, hafnium, zirconium, molybdenum, and tungsten. The electropositive element comprises one of a group consisting of a Group IIA element, a Group IIIB element, and lanthanide series element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.