Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence
US7684161B2 · kind B2 · utility
10Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2006 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Oct 16, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.