Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof
US7691717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2006 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Aug 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e21 dopant atoms per cubic centimeter. A method for forming the polysilicon resistor uses corresponding implant doses from about 1e14 to about 1e16 dopant ions per square centimeter. The p dopant and the n dopant may be provided simultaneously or sequentially. The method provides certain polysilicon resistors with a sheet resistance percentage standard deviation of less than about 1.5%, for a polysilicon resistor having a sheet resistance from about 100 to about 5000 ohms per square.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.