Deposition of tungsten nitride

US7691749B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Karl B. Levy · Los Altos, US
• Junghwan Sung · Los Altos, US
• Kaihan Ashtiani · San Jose, US
• James A. Fair · Mountain View, US
• Joshua Collins · Sunnyvale, US
• Juwen Gao · San Jose, US

Key dates

• Filing date: Dec 16, 2005
• Grant date: Apr 6, 2010
• Expiry date: Jul 10, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.