Deposition-selective etch-deposition process for dielectric film gapfill
US7691753B2 · kind B2 · utility
2Cited by
93References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Jun 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.