Chemical vapor deposition plasma reactor having plural ion shower grids
US7695590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2004 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Feb 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a fa…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.