Methods for producing low-stress carbon-doped oxide films with improved integration properties
US7695765B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Aug 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (<3.2) and low residual stress without sacrificing important integration properties such as refractive index and etch rate are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to TMSA, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the carbon doped oxide film under conditions in which the resulting dielectric layer has a net tensile stress of less than about 40 MPa, a hardness of at least about 1 GPa, and a SiC:SiOx bond ratio of not greater than about 0.75.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.