IGBT device and related device having robustness under extreme conditions

US7696600B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Pfirsch · Birkenfeld, DE
• Elmar Falck · Hohenbrunn, DE
• Josef Lutz · Rohrau, AT

Key dates

• Filing date: Mar 2, 2007
• Grant date: Apr 13, 2010
• Expiry date: Feb 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/107

Abstract

A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.