Boron derived materials deposition method
US7704816B2 · kind B2 · utility
4Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2008 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Jul 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about −10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.