HDP-CVD SiON films for gap-fill

US7704897B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hemant P. Mungekar · Campbell, US
• Young S. Lee · San Jose, US
• Agnieszka Jakubowicz · Los Gatos, US
• Zhong Qiang Hua · San Jose, US
• Rionard Purnawan · Mountain View, US
• Sanjay Kamath · Fremont, US
• Walter Zygmunt · San Jose, US

Key dates

• Filing date: Feb 22, 2008
• Grant date: Apr 27, 2010
• Expiry date: Feb 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.