High performance strained silicon FinFETs device and method for forming same

US7705345B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Stephen W. Bedell · Wappingers Falls, US
• Kevin K. Chan · Staten Island, US
• Dureseti Chidambarrao · Weston, US
• Silke H. Christianson · Bodenwerder, DE
• Jack O. Chu · Manhasset Hills, US
• Anthony G. Domenicucci · New Paltz, US
• Kam-Leung Lee · New Rochelle, US
• Anda C. Mocuta · Hopewell Junction, US
• John A. Ott · Marathon, US
• Qiqing C. Ouyang · Yorktown Heights, US

Key dates

• Filing date: Jan 7, 2004
• Grant date: Apr 27, 2010
• Expiry date: Jan 7, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.