Test structure for estimating electromigration effects with increased robustness with respect to barrier defects in vias

US7705352B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Frank Feustel · Dresden, DE
• Kai Frohberg · Meißen, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: Jul 25, 2007
• Grant date: Apr 27, 2010
• Expiry date: Mar 21, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By providing vias of increased mass flow blocking capability next to respective line segments of an electromigration test structure, the reliability of respective assessments may be enhanced, since electromigration-induced void formation in the test line segment under consideration may be efficiently decoupled from metal diffusion of neighboring test areas of the test structure.