Patent · US Active

Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof

US7709177B2 · kind B2 · utility

6Cited by
3References
18Claims
0Family size

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Key dates

Filing dateOct 2, 2007
Grant dateMay 4, 2010
Priority date
Expiry dateOct 2, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/145
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.