Process for forming an electronic device including a fin-type structure

US7709303B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• James D. Burnett · Austin, US
• Leo Mathew · Austin, US
• Byoung W. Min · Austin, US

Key dates

• Filing date: Jan 10, 2006
• Grant date: May 4, 2010
• Expiry date: Oct 15, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A process for forming an electronic device can include forming a semiconductor fin of a first height for a fin-type structure and removing a portion of the semiconductor fin such that the semiconductor fin is shortened to a second height. In accordance with specific embodiment a second semiconductor fin can be formed, each of the first and the second semiconductor fins having a different height representing a channel width. In accordance with another specific embodiment a second and a third semiconductor fin can be formed, each of the first, the second and the third semiconductor fins having a different height representing a channel width.