Composition and method for low temperature deposition of silicon-containing films
US7713346B2 · kind B2 · utility
19Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Oct 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.